The principles and applications of infrared micro-thermography technique for semiconductor temperature testing were reviewed. This technique is based on Planck blackbody radiance law, the infrared radiance was measured and then the temperature was calculated. Under the mid-infrared waveband, the highest spatial resolution had been realized, corresponding with the emissivity correction, infrared micro-thermography technique can measure the truth temperature of micro semiconductor devices. This technique was capable of measuring stable temperature thermography, continuous dynamic temperature thermography with millisecond level or even microsecond level temporal resolution, and temperature under pulsed conditions. Infrared micro-thermography has been used widely on temperature testing for varies kinds of semiconductor devices under varies conditions.