The preparation of chip scale atom vapor cells with high performance is one of the key technologies that urgently need to be solved in the development of chip scale quantum sensing instruments at present. In order to solve the problems of difficult quantitative filling of alkali metals and poor hermeticity in the preparation of chip scale atom vapor cells, the fabrication of the chip scale alkali atom vapor cells with high hermeticity was studied. The microelectromechanical system (MEMS) technology was used to realize the batch fabrication of chip scale atom vapor cells. The silicon cavity was prepared by deep silicon etching technology. The preparation and quantitative filling of alkali atoms were realized by photolysis of RbN₃. The atom vapor cell was sealed by silicon wafer/glass bonding twice using the anodic bonding technology. Rb alkali metal atom vapor cells with N₂ as buffer gas were successfully obtained . The bonding strength, hermeticity and absorption spectrum of the prepared atom vapor cell were tested. The results showed that the glass/silicon wafer/glass bonding strength of the atom vapor cell was high. The average leakage rate of the atom vapor cells in group B was 2.2×10^-9 Pa?m³?s^-1, which is the leading level in the industry currently. Finally, the reasons for the performance difference between the two groups of atom vapor cells were analyzed from the preparation processes, which lays an important foundation for promoting the development of chip scale integration technology of quantum sensing instruments.