O? and H?O significantly affect the hydrogen sensitivity of PdNi thin films. To monitor hydrogen concentration in high-humidity oxygen-containing environments such as electrolytic water hydrogen production, nuclear power plant storage, and deep-sea energy exploration, PdNi thin-film hydrogen sensors were fabricated using methods such as magnetron sputtering, photolithography, and plasma etching. By adjusting the Ni content and thickness of the PdNi thin films, the influence of Ni content and thickness on the stability of the PdNi thin-film hydrogen sensors under O? and H?O interference was systematically studied. Analytical methods such as XRD, SEM, and XPS were employed to characterize the crystallinity, elemental content, and elemental valence states of the PdNi thin films. The experimental results indicate that as the Ni content increases, the hydrogen response of the PdNi thin films becomes more affected by H?O and O?, while increasing the film thickness can reduce interference but weakens the hydrogen response sensitivity. Among them, the PdNi thin-film hydrogen sensor with a Ni content of 8.04% and a thickness of 24 nm, although affected by O? and H?O, can restore its response curve to the initial state after experiencing interference. This research provides important support for the development of the hydrogen sensor for applications under complex environment conditions.